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Raman Analysis of Si Crytallinity

BWT-4902

pt

<p>Raman spectroscopy at 532 nm excitation is used to study the crystalline and amorphous content of mixed phase silicon films.</p>

Raman spectroscopy at 532 nm excitation is used to study the crystalline and amorphous content of mixed phase silicon films.

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05007-030 São Paulo

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